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TWO-PHOTON PULSED TERAHERTZ EMISSION FROM GaAs/AlAs DOUBLE-BARRIER RESONANT TUNNELING DIODE BIASED INTO CURRENT SELF-OSCILLATION REGIME
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G. K. Rasulova
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10.5593/sgem2023/6.1
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1314-2704
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English
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23
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6.1
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• Prof. DSc. Oleksandr Trofymchuk, UKRAINE
• Prof. Dr. hab. oec. Baiba Rivza, LATVIA |
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Two-photon pulsed terahertz (THz) emission from a GaAs/AlAs double-barrier resonant tunneling diode biased into regime of self-oscillations of current has been detected. The two THz pulses are triggered at two critical points in period of current self-oscillations due to the periodic process of charge accumulation and drain in quantum well. The internal mechanism of relaxation self-oscillations, which controls the trapping and release time of electrons tunneling through the miniband, is responsible for the time delay between THz pulses and the emission energy of two photons.
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conference
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Proceedings of 23rd International Multidisciplinary Scientific GeoConference SGEM 2023
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23rd International Multidisciplinary Scientific GeoConference SGEM 2023, 03 - 09 July, 2023
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Proceedings Paper
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STEF92 Technology
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International Multidisciplinary Scientific GeoConference SGEM
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SWS Scholarly Society; Acad Sci Czech Republ; Latvian Acad Sci; Polish Acad Sci; Serbian Acad Sci and Arts; Natl Acad Sci Ukraine; Natl Acad Sci Armenia; Sci Council Japan; European Acad Sci, Arts and Letters; Acad Fine Arts Zagreb Croatia; Croatian Acad Sci and Arts; Acad Sci Moldova; Montenegrin Acad Sci and Arts; Georgian Acad Sci; Acad Fine Arts and Design Bratislava; Turkish Acad Sci.
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95-102
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03 - 09 July, 2023
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website
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9223
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Semiconductor double-barrier resonant tunneling diode, self-oscillations of current; two-photon terahertz emission; qubit
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