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ELECTROCHEMICAL ETCHING OF P-TYPE GALLIUM PHOSPHIDE
Abstract
Gallium phosphide is a semiconductor material of great interest for new LED technologies. Porous AIII?V are of great interest because of their interesting optical properties different of those for bulk material. The main goal of this research work is to obtain nanostructured porous gallium phosphide (por-GaP) layers by electrochemical etching of the monocrystalline (100) p-type GaP substrate surface. The structure and surface morphology of obtained samples were studied by scanning electron microscopy (SEM), atomic force microscopy (AFM) and Raman spectroscopy. The chemical composition of nanostructured GaP surfaces was studied by Energy Dispersive X-Ray(EDX) spectroscopy. It was found that shape and size of structures is strongly depending on electrochemical etching conditions. At constant applied voltage and varied current we observe that the pore size is increasing from 10 microns to 50 microns, and at fixed current, but varying the voltage the pore diameters can be achieved in the range between 100 to 200 nanometers.
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