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INFRARED LED ANALYSER OF OIL AND OIL PRODUCTS
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The HITRAN Database. URL:http://cfa-www.harvard.edu/hitran
Agar Corporation Process: measurement & control solutions. URL:http://agarcorp.com/Product/OW300Detail.html
N.D. Stoyanov, B.E. Zhurtanov, A.P. Astakhova, A.N. Imenkov and Yu.P. Yakovlev, High-efficiency LEDs of 1.6 – 2.4 μm spectral range for medical diagnostics and environment monitoring, Semiconductors, 2003, vol. 37, № 8, pp 971 – 984.
I. Vurgaftman, J.R. Merey Band parameters for III – V compound semiconductors and their alloys, J.Appl.Phys., vol. 89. №11, 2001, pp 5815 – 5875. 16th International Multidisciplinary Scientific GeoConference SGEM2016 www.sgem.org 16th International Multidisciplinary Scientific GeoConference SGEM 2016
Mikhailova M.P. and Titkov A.N. Type II heterojunctions in the GaInAsSb/GaSb system, Semicond. Sci. Technol., 1994, vol. 9, №7, pp 1279 – 1295
J. Cheetham, A. Krier, I.P. Marko, A. Aldukhayel, S.J. Sweeney, Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light -emitting diodes, Appl. Phys. Lett., vol. 99, №14, 2011, art. 141110-1 – 141110-3.
A. Polkovnikov, G. Zegrya, Electron -electron relaxation effect on Auger recombination in direct-band semicon ductors, Phys. Rev. B., v ol. 64, №7. 2001, a rt. 073205.
Mikhailova M.P. Handbook Series on Semiconductor Parameters, v ol. 2. Editors: M. Levinshtein, S. Rumyantsev and M. Shur, London, World Scientific, 1999, pp 180 – 205. 16th International Multidisciplinary Scientific GeoConference SGEM2016 www.sgem.org
The HITRAN Database. URL:http://cfa-www.harvard.edu/hitran
Agar Corporation Process: measurement & control solutions. URL:http://agarcorp.com/Product/OW300Detail.html
N.D. Stoyanov, B.E. Zhurtanov, A.P. Astakhova, A.N. Imenkov and Yu.P. Yakovlev, High-efficiency LEDs of 1.6 – 2.4 μm spectral range for medical diagnostics and environment monitoring, Semiconductors, 2003, vol. 37, № 8, pp 971 – 984.
I. Vurgaftman, J.R. Merey Band parameters for III – V compound semiconductors and their alloys, J.Appl.Phys., vol. 89. №11, 2001, pp 5815 – 5875. 16th International Multidisciplinary Scientific GeoConference SGEM2016 www.sgem.org 16th International Multidisciplinary Scientific GeoConference SGEM 2016
Mikhailova M.P. and Titkov A.N. Type II heterojunctions in the GaInAsSb/GaSb system, Semicond. Sci. Technol., 1994, vol. 9, №7, pp 1279 – 1295
J. Cheetham, A. Krier, I.P. Marko, A. Aldukhayel, S.J. Sweeney, Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light -emitting diodes, Appl. Phys. Lett., vol. 99, №14, 2011, art. 141110-1 – 141110-3.
A. Polkovnikov, G. Zegrya, Electron -electron relaxation effect on Auger recombination in direct-band semicon ductors, Phys. Rev. B., v ol. 64, №7. 2001, a rt. 073205.
Mikhailova M.P. Handbook Series on Semiconductor Parameters, v ol. 2. Editors: M. Levinshtein, S. Rumyantsev and M. Shur, London, World Scientific, 1999, pp 180 – 205. 16th International Multidisciplinary Scientific GeoConference SGEM2016 www.sgem.org
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