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MORPHOLOGICAL AND STRUCTURAL CHARACTERIZATION OF THIN LAYERS OF TIN COATED ON THE SILICON SUBSTRATE
Abstract
Morphological and structural characterisations were carried out on the layers of TiN lodged on the silicon substrate with orientation (100). The analysis of the crystalline structure of TiN films was performed by X-ray diffraction (XRD), using a diffractometer high resolution, using radiation Mo K? . The Atomic Force Microscopy Analysis (AFM) has followed the assessment of the influence of important parameters of the filing process (temperature, polarity of the substrate) on the surface morphology and the roughness of TiN films. The bulge test was first conducted on the silicon nitride films to determine its proper residual stress and Young, s modulus which were found to be ?i = 228 + 15 MPa and E = 226 + 10 GPa , respectively. Finally, using a simple rule of mixture formula ,the elastic mechanical properties of TiN coatings were determined . Both the Young, s modulus and residual stress showed increasing values with bias voltage, nitrogen to titanium ratio, and coating density. Scanning electron microscopy of cross sectioned samples showed that coating growth occurs by formation of equiaxial crystallites, which leads to columnar morphology beyond a thickness of 3 ? 10 ?m . The columns are nearly perpendicular to the film surface .
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