SWS Academic Research eLibraryEarth & Planetary Sciences

Scholarly record

STABILIZATION OF POROUS SILICON LUMINESCENCE WITH SURFACE MODIFICATIONS

E. Kayahan, O. Gundogdu, E. Simooglu, M. H. Aslan, A. Y. Oral

First published: 2010DOI pendingView metrics

Abstract

In this study, enhancement and stabilization of photoluminescence (PL) by porous silicon (PS) were investigated. The PS samples were metallized in solutions containing 3 mM NaNO3 metal salt using immersing plating method. The surface bond configuration of PS was monitored by Fourier Transmission Infrared Spectroscopy (FTIR) and it was found that the PS surface was oxidized after the metallization. The PL intensity increased after certain critical immersion times and PL spectrum shifted towards the high energy region after the metallization. PL intensity of metalized PS samples was more stable than as-anodized PS sample. The experimental results suggested the possibility that oxygen and/or metal passivation (i.e. Na) of PS surface could be the most suitable way for to obtain efficient and stabilized PL.

Publication details

Title
STABILIZATION OF POROUS SILICON LUMINESCENCE WITH SURFACE MODIFICATIONS
Authors
E. Kayahan, O. Gundogdu, E. Simooglu, M. H. Aslan, A. Y. Oral
Proceedings
10th International Multidisciplinary Scientific GeoConference SGEM2010
Publisher
SGEM Scientific GeoConference
Year
2010
Pages
1167-1172
ISSN
1314-2704
ISBN
954-91818-1-2
Language
en
Publication type
Conference Paper
Keywords
FTIR of PSMicro and Nano TechnologiesPorous siliconluminescence stabilization
References6

  1. A. Benilov, I. Gavrilchenko, I. Benilova, V. Skryshevsky, M. Cabrera, Influence of pH solution on photoluminescence of porous silicon. Sensors and Actuators A, 137(2007)245-349.

  2. E. Kayahan, N. Ceylan, K. Esmer, Ag-metallization effects on optical and electrical properties of porous silicon, Applied Surface Science, 255 (2008) 2808-2812.

  3. M.V. Wolkin, J. Jörne, P.M. Fauchet, G. Allan and C. Delerue, Electronic states and luminescence in porous silicon quantum dots: the role of oxygen, Phys. Rev. Lett. 82 (1999) 197-200.

  4. S.M. Hossain, C. Chakraborty, S. K. Dutta, J. Das, H. Saha, Stability in photoluminescence of porous silicon, Journal of Luminescence, 91 (2000) 195-202.

  5. F. A. Harraz, T. Sakka, Y. H. Ogata, Immersion platting of nickel onto a porous silicon layer from fluoride solutions, Phys. Stat. Sol. (a), 197, (1) (2003) 51-56.

  6. M. Fujiwara, T. Matsumoto, H. Kobayashi, K. Tanaka, N. Happo, K. Hori, Strong enhancement and long-time stabilization of porous silicon photoluminescence by laser irradiation, Journal of Luminescence, 113 (2005) 243-248.

View or Download full articleAccess options
Full paper accessChoose SWS login, librarian support, or instant article download.

SWS access login

Login as SWS Scientific Committee

Authors and approved SWS contributors will read and export their own linked papers after identity matching by SWS profile, email and SGEM GlobalID.

For librarian assistance: [email protected]

Purchase Instant Access

48-hour online accessComing soon
Online-only accessComing soon
Download the full article in PDF formatEUR 35
  • Article can be downloaded after successful payment.
  • Article may be used according to SWS library access terms.
  • Article cannot be redistributed.
Get full paper

Back to publication list