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Gallium phosphide is a semiconductor material of great interest for new LED technologies. Porous AIII?V are of great interest because of their interesting optical properties different of those for bulk material. The main goal of this research work is to obtain nanostructured porous gallium phosphide (por-GaP) layers by electrochemical etching of the monocrystalline (100) p-type GaP substrate surface. The structure and surface morphology of obtained samples were studied by scanning electron microscopy (SEM), atomic...