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Morphological and structural characterisations were carried out on the layers of TiN lodged on the silicon substrate with orientation (100). The analysis of the crystalline structure of TiN films was performed by X-ray diffraction (XRD), using a diffractometer high resolution, using radiation Mo K? . The Atomic Force Microscopy Analysis (AFM) has followed the assessment of the influence of important parameters of the filing process (temperature, polarity of the substrate) on the surface morphology and the roughnes...