Publication
FEATURES OF TOTAL OPTICAL REFLECTION IN SILICON NANOSTRUCTURES OBTAINED BY METAL ASSISTED CHEMICAL ETCHING
(STEF92 Technology, 2017-06-20, Gauhar Assilbayeva)
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Total (specular+diffusive) reflection of nanostructured Si layers prepared by metal assisted chemical etching (MACE) of crystalline silicon (c-Si) wafers is investigated. The thickness of nanostructured Si layers is varied from 0.3 to 100 ?m by increasing the MACE time. The time dependence of silicon nanostructured layers thickness on the etching time was found to be logarithmic. Spectra of the total reflection were measured in optical range from 0.2 to 2 ?m. Depending on the thickness of sample, it was observed a...
Micro and Nano Technologies2017